?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt march 2013 g c e e c g collector (flange) absolute maximum ratings symbol description ratings unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25?c 80 a collector current @ t c = 100 ?c 40 a i cm (1) pulsed collector current @ t c = 25?c 160 a p d maximum power dissipation @ t c = 25?c 290 w maximum power dissipation @ t c = 100 ?c 116 w t j operating junction temperature -55 to +150 ?c t stg storage temperature range -55 to +150 ?c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 ?c notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 0.43 ? c / w r ? jc (diode) thermal resistance, junction-to-case 1.5 ? c / w r ? ja thermal resistance, junction-to-ambient -- 40 ? c / w FGH80N60FD 600 v field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.8 v @ i c = 40 a ? high input impedance ? fast switching ? rohs complaint applications ? induction heating, pfc, telecom, ess general description using novel field stop igbt technology, fairchild ? 's field stop igbts offer the optimum performance for induction heating, telecom, ess and pfc applications where low conduction and switching losses are essential.
?2007 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt package marking and ordering information device marking device package packaging type qty per tube max qty per box FGH80N60FD FGH80N60FDtu to-247 tube 30ea - electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector-emitter breakdown voltage v ge = 0 v, i c = 250 ua 600 -- -- v ?bv ces / ?t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 250 ua -- 0.6 -- v/?c i ces collector cut-off current v ce = v ces , v ge = 0 v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0 v -- -- 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ua, v ce = v ge 4.5 5.5 7.0 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v -- 1.8 2.4 v i c = 40 a , v ge = 15 v, t c = 125 ?c -- 2.05 -- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz -- 2110 -- pf c oes output capacitance -- 200 -- pf c res reverse transfer capacitance -- 60 -- pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25?c -- 21 -- ns t r rise time -- 56 -- ns t d(off) turn-off delay time -- 126 -- ns t f fall time -- 50 100 ns e on turn-on switching loss -- 1 1.5 mj e off turn-off switching loss -- 0.52 0.78 mj e ts total switching loss -- 1.52 2.28 mj t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 125?c -- 20 -- ns t r rise time -- 54 -- ns t d(off) turn-off delay time -- 131 -- ns t f fall time -- 70 -- ns e on turn-on switching loss -- 1.1 -- mj e off turn-off switching loss -- 0.78 -- mj e ts total switching loss -- 1.88 -- mj q g total gate charge v ce = 400 v, i c = 40 a, v ge = 15 v -- 120 -- nc q ge gate-emitter charge -- 14 -- nc q gc gate-collector charge -- 58 -- nc
?2007 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 ?c - 2.3 2.8 v t c = 125 ?c - 1.7 - t rr diode reverse recovery time i es =20a, di es / dt = 200 a/ ?s t c = 25 ?c - 36 - ns t c = 125 ?c - 105 - i rr diode reverse recovery current t c = 25 ?c - 2.6 - ns t c = 125 ?c - 7.8 - q rr diode reverse recovery charge t c = 25 ?c - 46.8 - nc t c = 125 ?c - 409 -
?2007 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. vge temperature at variant current level
?2007 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt typical performance characteristics (continued) figure 7. saturation voltage vs. vge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteeristics figure 11. turn-off switching soa figure 12. turn-on characteristics vs. characteristics gate resistance
?2007 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt typical performance characteristics (continued) figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs gate resistance collector current figure 17. switching loss vs collector current
?2007 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt typical performance characteristics (continued) figure 18. transient thermal impedance of igbt figure 19. typical forward voltage drop figure 20. stored charge figure 21. reverse recovery time figure 22. reverse recovery current t 1 p dm t 2
?2007 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH80N60FD rev. c1 FGH80N60FD 600 v field stop igbt to-247a03 mechanical dimensions
FGH80N60FD 600 v field stop igbt ?2007 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH80N60FD rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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